inchange semiconductor product specification silicon npn power transistors 2SD2093 description ? with to-3pml package ? darlington ? complement to type 2sb1388 ? high dc current gain ? low saturation voltage ? large current capacity and large aso applications ? motor drivers ? printer hammer drivers ? relay drivers, ? voltage regulator control pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 110 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 6 v i c collector current 10 a i cm collector current-peak 15 a t c =25 ?? 45 p c collector power dissipation 3.0 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pml) and symbol ?? inchange semicondutor
inchange semiconductor product specification 2 silicon npn power transistors 2SD2093 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =5a;i b =10m a 0.9 v v besat base-emitter saturation voltage i c =5a;i b =10m a 2.0 v v (br)ceo collector-emitter breakdown voltage i c =5ma;i b =0 110 v v (br)cbo collector-base breakdown voltage i c =50ma;r be = ?t 100 v i ebo emitter cut-off current v eb =5v; i c =0 3.0 ma i cbo collector cut-off current v cb =80v; i e =0 0.1 ma h fe dc current gain i c =5 a ; v ce =3v 1500 4000 f t transition frequency i c =5 a ; v ce =5v 20 mhz switching times t on turn-on time 0.6 | s t s storage time 4.8 | s t f fall time i c =5a i b1 =-i b2 =10ma v cc =50v ,r l =10 |? 1.6 | s ?? inchange semicondutor
inchange semiconductor product specification 3 silicon npn power transistors 2SD2093 package outline fig.2 outline dimensions ?? inchange semicondutor
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